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NTMFD4902NFT1G

Part No NTMFD4902NFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual), Schottky
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.3A, 13.3A
Maximum Rds On at Id,Vgs 6.5 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 1150pF @ 15V
Maximum Power Dissipation 1.1W, 1.16W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Win Source Part Number 025799-NTMFD4902NFT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian NTMFD4902NFT1G CAD Model

Description

ON Semiconductor NTMFD4902NFT1G Dual N-Channel Power MOSFET

The ON Semiconductor NTMFD4902NFT1G is a high-performance, dual N-Channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This MOSFET features advanced technology that provides low on-resistance, high switching speed, and excellent thermal performance, making it an ideal choice for space-constrained and power-dense environments.

With its compact footprint, the NTMFD4902NFT1G integrates two independent N-Channel MOSFETs in a single package, enabling designers to reduce board space without sacrificing performance. The device is housed in a Power 33 (DFN5x6) package, which is known for its low thermal resistance and excellent electrical isolation.

Key specifications of the NTMFD4902NFT1G include a drain-to-source voltage (V<sub>DS) of 30V, a continuous drain current (I<sub>D) of up to 18A at 25°C, and a power dissipation (P<sub>D) of 2.4W. Its low gate charge (Q<sub>G) and fast switching capabilities contribute to reduced switching losses, enhancing overall system efficiency.

The device's low on-resistance (R<sub>DS(on)) minimizes conduction losses and helps to maintain low operating temperatures, which is critical for maintaining reliability and longevity in high-performance applications. The NTMFD4902NFT1G is also characterized by its robust body diode, which can handle high surge currents without degradation.

Common applications for the NTMFD4902NFT1G include DC-DC converters, power supply modules, motor drives, and other power management circuits in consumer electronics, computing, telecommunications, and industrial systems. Its high efficiency and thermal performance make it particularly well-suited for applications where energy conservation is a priority, such as battery-operated devices and energy-efficient power supplies.

The NTMFD4902NFT1G is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability. With its combination of performance, efficiency, and compact design, the NTMFD4902NFT1G is a reliable and versatile solution for modern power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.4410 $62.1740
32+ $3.6439 $116.6048
50+ $3.5301 $176.5050
68+ $3.4162 $232.3016
88+ $3.3024 $290.6112
118+ $2.9607 $349.3626
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,060 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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