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NTMFS4846NT1G

Part No NTMFS4846NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.7A SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 53nC @ 11.5V
Max Input Capacitance 3250pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 890mW (Ta), 55.5W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 112735-NTMFS4846NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4846NT1G CAD Model

Description

The NTMFS4846NT1G is a high-performance, single N-channel power MOSFET produced by ON Semiconductor, a renowned leader in energy-efficient innovations. This field-effect transistor is designed for a wide range of applications, including power management in consumer, automotive, and industrial electronics.

Key Features

  • Low On-Resistance: The NTMFS4846NT1G MOSFET features an exceptionally low on-resistance (RDS(on)), which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: This device is capable of handling high continuous drain currents, making it suitable for applications requiring robust power handling.
  • High Performance: With fast switching speeds and a low gate charge, the NTMFS4846NT1G offers high-performance operation, contributing to reduced switching losses.
  • Power Dissipation: Its superior thermal characteristics allow for excellent power dissipation, ensuring reliability even under high power and temperature conditions.
  • Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, this MOSFET provides superior performance in a compact footprint.

Applications

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 30V
Continuous Drain Current (ID) 17.5A
Power Dissipation (PD) 3.8W
Operating Temperature Range -55°C to +150°C
Package SO-8FL

The NTMFS4846NT1G by ON Semiconductor is a testament to the company's commitment to providing high-quality, energy-efficient solutions for a wide array of power management needs. Its advanced features and robust design make it an ideal choice for designers looking to optimize their power systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6185 $64.7400
90+ $1.3280 $119.5200
135+ $1.2866 $173.6910
190+ $1.2451 $236.5690
240+ $1.2035 $288.8400
325+ $1.0790 $350.6750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,900 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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