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NTMFS4C06NBT1G

Part No NTMFS4C06NBT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V SO8FL
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1683pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.55W (Ta), 30.5W (Tc)
Rds On (Maximum) @ Id, Vgs 4 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 5-DFN (5x6) (8-SOFL)
Package 8-PowerTDFN, 5 Leads
Manufacturer Homepage www.onsemi.com
Win Source Part Number 715652-NTMFS4C06NBT1G
Popularity Medium
Supply and Demand Status Limited
Introduction Date January 01, 2000
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian NTMFS4C06NBT1G CAD Model

Description

ON Semiconductor NTMFS4C06NBT1G Power MOSFET

The NTMFS4C06NBT1G is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This advanced power management component is crafted to meet the rigorous demands of modern electronic circuits, providing efficient power control and handling. With its compact footprint and robust capabilities, the NTMFS4C06NBT1G is an ideal choice for a wide range of applications, including power supply, computing, automotive, and consumer electronics.

Key Features:

  • Low On-Resistance: The NTMFS4C06NBT1G boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and enhanced power efficiency. This feature is crucial for applications that require high current handling while maintaining energy efficiency.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant levels of current, making it suitable for high-power applications.
  • Fast Switching Speed: The device offers fast switching capabilities, which are essential for reducing switching losses and improving performance in high-frequency power conversion systems.
  • Thermal Management: The NTMFS4C06NBT1G is designed with an advanced thermal management system, ensuring reliable operation even under high-temperature conditions.
  • Single N-Channel: As a single N-channel MOSFET, it provides a straightforward design approach, simplifying circuit integration and minimizing design complexity.

Applications:

  • DC/DC Converters
  • Motor Drives
  • Power Management Systems
  • Computing and Server Power Supplies
  • Automotive Electronics

The NTMFS4C06NBT1G comes in a compact, surface-mount package that is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability. Its superior electrical characteristics and thermal performance make it a versatile and reliable component for designers seeking to optimize their power management solutions. With its integration into your electronic designs, the NTMFS4C06NBT1G will contribute to achieving high efficiency, reliability, and performance standards that modern technology demands.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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