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NTMFS4C10NT1G

Part No NTMFS4C10NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.2A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 9.7nC @ 4.5V
Max Input Capacitance 987pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta), 23.6W (Tc)
Maximum Rds On at Id,Vgs 6.95 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN
Win Source Part Number 121717-NTMFS4C10NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4C10NT1G CAD Model

Description

ON Semiconductor NTMFS4C10NT1G N-Channel Power MOSFET

The ON Semiconductor NTMFS4C10NT1G is a cutting-edge N-Channel Power MOSFET that is designed to meet the high-efficiency and power density needs of modern electronic applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are known for their reliability and performance in a wide range of power management tasks.

Constructed with advanced silicon technology, the NTMFS4C10NT1G offers a drain-to-source voltage (VDS) of 30V, making it suitable for a variety of applications that require efficient power conversion and switching. The device boasts a continuous drain current (ID) of 40A at 25°C, ensuring that it can handle high current loads with ease. Its low on-resistance (RDS(on)) of just 2.5mΩ at a gate drive of 10V minimizes conduction losses and helps improve overall system efficiency.

Featuring a compact and durable package, the NTMFS4C10NT1G is encapsulated in a thermally enhanced 5mm x 6mm Power QFN package. This package design not only saves valuable board space but also provides excellent thermal performance, which is critical for maintaining stability and longevity in high-temperature environments.

The NTMFS4C10NT1G also includes an integrated ESD protection diode, which safeguards the device against electrostatic discharge events, further enhancing its robustness. This feature is particularly important in applications where ESD events are a common concern, such as in automotive electronics, industrial control systems, and consumer electronics.

With its fast switching speeds and low gate charge (QG), the NTMFS4C10NT1G is an ideal choice for high-frequency power switching applications. It is commonly used in DC-DC converters, motor drives, and power supply circuits where efficiency and power density are critical. Additionally, the MOSFET's RoHS compliance ensures that it meets the latest environmental standards, making it a responsible choice for manufacturers looking to create eco-friendly products.

In summary, the ON Semiconductor NTMFS4C10NT1G N-Channel Power MOSFET is a high-performance solution that offers efficiency, power handling, and compact design, making it an excellent choice for a wide array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,884 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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