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NTMFS4C250NT1G

Part No NTMFS4C250NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A/69A 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features N-Channel 30 V 11A (Ta), 69A (Tc) 770mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN, 5 Leads
Case / Package 5-DFN (5x6) (8-SOFL)
Family Name NTMFS4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number NTMFS4C250NT1GOSTR, NTMFS4C250NT1GOSCT, NTMFS4C250NT1GOSDKR, NTMFS4C250NT1G-ND
Quantity per package 1500
Popularity High
Supply and Demand Status Balance
Win Source Part Number 929471-NTMFS4C250NT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4C250NT1G CAD Model

Description

ON Semiconductor NTMFS4C250NT1G N-Channel Power MOSFET

The ON Semiconductor NTMFS4C250NT1G is a high-performance N-Channel Power MOSFET designed for a variety of applications that require efficient power management and high switching speeds. This MOSFET leverages the latest technology to provide superior performance in power conversion and management tasks. It is commonly used in power supplies, motor controls, and DC-DC converters, among other electronic circuits.

Key Features

  • Low On-Resistance: The NTMFS4C250NT1G boasts an exceptionally low on-resistance (RDS(on)) of only 3.1mΩ at VGS = 10V, which contributes to reduced conduction losses and improved overall efficiency.
  • High Continuous Drain Current: It can handle a continuous drain current (ID) of 235A, making it suitable for high current applications.
  • High Switching Speed: The device offers fast switching speeds, which is essential for reducing switching losses and improving performance in high-frequency circuits.
  • Power Dissipation: With a power dissipation of 125W, this MOSFET can withstand significant power levels, making it ideal for heavy-duty operations.
  • High Temperature Operation: It is capable of operating at junction temperatures ranging from -55°C to +175°C, ensuring reliability in harsh thermal environments.

Advanced Technology

The NTMFS4C250NT1G incorporates advanced silicon technology, which enhances its thermal performance and ruggedness. This technology also minimizes gate charge (QG), reducing the power required to drive the MOSFET, which is particularly beneficial in battery-powered devices where energy conservation is critical.

Package and Environmental Compliance

Enclosed in a compact and robust 5x6 mm² flat lead package, the NTMFS4C250NT1G is designed to optimize board space without compromising power handling capabilities. Furthermore, it is fully compliant with RoHS and Halogen-Free standards, reflecting ON Semiconductor's commitment to environmental sustainability.

Applications

With its robust features, the NTMFS4C250NT1G is an excellent choice for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • High-Efficiency Power Management Systems

ON Semiconductor's NTMFS4C250NT1G N-Channel Power MOSFET is a reliable and efficient solution for designers looking to improve power density and efficiency in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1661 $58.3050
125+ $0.9568 $119.6000
190+ $0.9270 $176.1300
260+ $0.8971 $233.2460
335+ $0.8672 $290.5120
450+ $0.7775 $349.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,830 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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