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NTMFS4C35NT1G

Part No NTMFS4C35NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.4A 5DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V
Power Dissipation (Max) 780mW (Ta), 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NTMFS4
Standard Package 1,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649893-NTMFS4C35NT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4C35NT1G CAD Model

Description

ON Semiconductor NTMFS4C35NT1G - N-Channel Power MOSFET

The NTMFS4C35NT1G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in energy-efficient innovations. This MOSFET is part of ON Semiconductor's portfolio of power management devices, which are known for their reliability and efficiency in a wide range of applications.

With its compact and durable design, the NTMFS4C35NT1G offers an excellent solution for power switching applications. It features a drain-to-source voltage (VDS) of 30V, a continuous drain current (ID) of 119A, and a power dissipation (PD) of 3.8W. This device is optimized for fast switching performance, which is critical in minimizing energy loss and improving the overall efficiency of electronic systems.

The NTMFS4C35NT1G incorporates advanced trench technology, which provides superior on-state resistance (RDS(on)) as low as 3.5 mΩ at VGS = 10V. This low on-resistance ensures lower conduction losses and supports higher current handling capabilities, making it an ideal choice for power supply circuits, motor drives, and other high-current applications.

Housed in a compact, surface-mountable 5x6 mm footprint, the NTMFS4C35NT1G is part of ON Semiconductor's PowerTrench® series, which is designed to maximize power density while minimizing PCB space. Its package is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability.

Other notable features of the NTMFS4C35NT1G include a low gate charge (QG), which enhances the device's switching speed, and a low threshold voltage (Vth), ensuring easy drive capability. The device also offers robust thermal performance, thanks to its excellent thermal resistance, which allows for reliable operation even under high-temperature conditions.

In summary, the NTMFS4C35NT1G from ON Semiconductor is a robust, energy-efficient N-Channel Power MOSFET that is ideal for modern high-performance power conversion and management applications where space is at a premium and power efficiency is paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6622 $59.5980
215+ $0.5433 $116.8095
330+ $0.5264 $173.7120
455+ $0.5094 $231.7770
590+ $0.4924 $290.5160
785+ $0.4414 $346.4990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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