ON Semiconductor NTMFS4C35NT1G - N-Channel Power MOSFET
The NTMFS4C35NT1G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in energy-efficient innovations. This MOSFET is part of ON Semiconductor's portfolio of power management devices, which are known for their reliability and efficiency in a wide range of applications.
With its compact and durable design, the NTMFS4C35NT1G offers an excellent solution for power switching applications. It features a drain-to-source voltage (VDS) of 30V, a continuous drain current (ID) of 119A, and a power dissipation (PD) of 3.8W. This device is optimized for fast switching performance, which is critical in minimizing energy loss and improving the overall efficiency of electronic systems.
The NTMFS4C35NT1G incorporates advanced trench technology, which provides superior on-state resistance (RDS(on)) as low as 3.5 mΩ at VGS = 10V. This low on-resistance ensures lower conduction losses and supports higher current handling capabilities, making it an ideal choice for power supply circuits, motor drives, and other high-current applications.
Housed in a compact, surface-mountable 5x6 mm footprint, the NTMFS4C35NT1G is part of ON Semiconductor's PowerTrench® series, which is designed to maximize power density while minimizing PCB space. Its package is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability.
Other notable features of the NTMFS4C35NT1G include a low gate charge (QG), which enhances the device's switching speed, and a low threshold voltage (Vth), ensuring easy drive capability. The device also offers robust thermal performance, thanks to its excellent thermal resistance, which allows for reliable operation even under high-temperature conditions.
In summary, the NTMFS4C35NT1G from ON Semiconductor is a robust, energy-efficient N-Channel Power MOSFET that is ideal for modern high-performance power conversion and management applications where space is at a premium and power efficiency is paramount.