ON Semiconductor NTMFS5H615NLT1G - Power MOSFET
The NTMFS5H615NLT1G is a state-of-the-art Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance, N-channel MOSFET is designed to meet the rigorous demands of power regulation in modern electronic applications. With its compact footprint and low on-resistance, the NTMFS5H615NLT1G is perfect for power supply circuits where efficiency and reliability are critical.
Key Features
- Low RDS(on): The device boasts an ultra-low on-resistance, which significantly reduces power losses and improves overall efficiency during operation.
- High Continuous Drain Current (ID): With a high continuous drain current rating, this MOSFET can handle substantial power, making it suitable for high-power applications.
- Advanced Technology: Utilizing ON Semiconductor's latest trench technology, the NTMFS5H615NLT1G offers superior performance and ruggedness.
- Power Dissipation: Excellent thermal characteristics allow for impressive power dissipation, ensuring reliable performance even under strenuous conditions.
- RoHS Compliant: The product is fully RoHS compliant, making it environmentally friendly and suitable for use in various international markets.
Applications
The NTMFS5H615NLT1G is versatile and can be used in a wide array of applications, including:
- DC/DC Converters
- Power Management for Computers and Servers
- Motor Drives
- Power Supplies for Networking Equipment
- Automotive Systems
- Solar Inverters and Renewable Energy Systems
Technical Specifications
| Parameter |
Value |
| VDS (Drain-Source Voltage) |
60V |
| ID (Continuous Drain Current) |
138A |
| RDS(on) |
5.3 mΩ |
| Package |
DFN5x6 |
Overall, the NTMFS5H615NLT1G from ON Semiconductor is an excellent choice for designers looking for a robust and efficient Power MOSFET that can deliver high performance in a variety of power applications.