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NTMS10P02R2G

Part No NTMS10P02R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 70nC @ 4.5V
Max Input Capacitance 3640pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 10A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 025811-NTMS10P02R2G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMS10P02R2G CAD Model

Description

Introducing the NTMS10P02R2G Power MOSFET by ON Semiconductor

The NTMS10P02R2G is a cutting-edge P-Channel Power MOSFET brought to you by ON Semiconductor, a renowned leader in energy-efficient innovations. Designed to address the demanding requirements of power management applications, this device offers a perfect blend of low on-resistance and high switching performance, making it an ideal choice for a wide range of electronic circuits.

Constructed using ON Semiconductor's advanced PowerTrench® process, the NTMS10P02R2G boasts exceptional electrical characteristics. This process technology ensures that the MOSFET operates with reduced gate charge and lower losses, thereby enhancing its overall efficiency. With its compact surface-mount package, the NTMS10P02R2G is a space-saving solution that fits perfectly into modern high-density circuit designs.

Key Features of the NTMS10P02R2G:

  • Low RDS(on): Provides reduced conduction losses and improves power efficiency, which is critical for battery-powered devices and energy-sensitive applications.
  • High Switching Speed: The fast switching capability of the device minimizes transition losses and allows for high-frequency operation, which is essential for power converters and inverters.
  • Thermal Management: Enhanced thermal characteristics ensure reliable operation even under high current conditions, contributing to the longevity of the product.
  • P-Channel Operation: Simplifies the drive circuitry by eliminating the need for a negative gate drive, which can be advantageous in certain circuit topologies.
  • RoHS Compliant: Adheres to the latest environmental standards, ensuring that the product is free from hazardous substances and is suitable for use in green applications.

The NTMS10P02R2G is versatile and can be used in a variety of applications, including load switch circuits, power management in portable devices, and as a high-side switch in motor control systems. Its robustness and reliability are backed by ON Semiconductor's commitment to quality, making it a smart choice for designers looking to enhance the performance of their power management systems.

Whether you are developing power supplies, battery management systems, or sophisticated electronic controls, the NTMS10P02R2G from ON Semiconductor delivers the performance and efficiency you need in a compact and environmentally friendly package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4731 $51.5585
75+ $1.3799 $103.4925
115+ $1.3333 $153.3295
165+ $1.2400 $204.6000
210+ $1.1934 $250.6140
265+ $1.1468 $303.9020
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Availability: 8,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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