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NTMS4700NR2G

Part No NTMS4700NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 1600pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 860mW (Ta)
Maximum Rds On at Id,Vgs 7.2 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 209356-NTMS4700NR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMS4700NR2G CAD Model

Description

ON Semiconductor NTMS4700NR2G Overview

The NTMS4700NR2G is a cutting-edge N-channel Power MOSFET developed by ON Semiconductor, a leader in energy-efficient innovations. This high-performance component is designed to meet the demanding requirements of modern electronic applications, offering a perfect balance of low on-resistance and high switching speed.

Key Features

  • Low On-Resistance: With its low R<sub>DS(on), the NTMS4700NR2G ensures efficient power consumption, leading to energy savings and prolonged battery life in portable applications.
  • High Switching Speed: The device is optimized for fast switching, which is essential for high-frequency circuits and helps reduce switching losses.
  • Enhanced Thermal Performance: The NTMS4700NR2G comes in a compact, surface-mountable package that provides excellent thermal conduction, allowing for better heat dissipation and improved reliability.
  • Gate Charge Optimization: Designed with gate charge optimization, this MOSFET provides a reduced gate drive requirement, resulting in lower switching energy and improved total system efficiency.

Applications

The versatility of the NTMS4700NR2G makes it suitable for a wide range of applications, including:

  • Power management in portable and battery-powered devices
  • DC-DC converters
  • Motor control circuits
  • Load switching
  • High-efficiency power supplies

Product Specifications

The NTMS4700NR2G boasts impressive specifications that make it a robust choice for designers:

  • Voltage Rating: 30V
  • Continuous Drain Current: 32A
  • Power Dissipation: 2.5W
  • Operating Temperature Range: -55°C to 150°C
  • Package: 8-SOIC (0.154", 3.90mm Width)

In summary, the ON Semiconductor NTMS4700NR2G N-channel Power MOSFET is an exceptional component that provides high efficiency, durability, and performance for a variety of electronic applications. Its low on-resistance, fast switching capabilities, and robust thermal management make it a top choice for engineers looking to optimize their power designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2645 $63.2250
115+ $1.0376 $119.3240
175+ $1.0052 $175.9100
240+ $0.9727 $233.4480
310+ $0.9403 $291.4930
415+ $0.8431 $349.8865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,300 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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