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NTMS4807NR2G

Part No NTMS4807NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.1A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2900pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 860mW (Ta)
Maximum Rds On at Id,Vgs 6.1 mOhm @ 14.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 025814-NTMS4807NR2G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4807NR2G CAD Model

Description

The NTMS4807NR2G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This N-channel MOSFET is designed to deliver high performance in a variety of applications, particularly in power management technologies where efficiency and reliability are paramount.

Key Features

  • Low On-Resistance: The NTMS4807NR2G boasts an impressively low on-resistance, which translates to reduced power losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With fast switching capabilities, this MOSFET is ideal for high-frequency power switching applications, ensuring minimal transition losses and better performance.
  • Advanced Technology: Manufactured with ON Semiconductor's advanced technology, this device offers superior reliability and longevity, standing up to the demands of modern electronic systems.
  • Environmentally Friendly: The NTMS4807NR2G is RoHS compliant, meaning it is free from hazardous substances, making it a responsible choice for environmentally conscious design.
  • Power Dissipation: This device can handle significant power levels with a total power dissipation of 2.5 W, accommodating a range of power-intensive applications.

Applications

The versatile NTMS4807NR2G is suitable for a wide array of applications, including:

  • DC/DC converters
  • Power supply circuits
  • Motor drives
  • Computing peripherals
  • Lighting solutions

Product Specifications

Parameter Value V<sub>DS 30V I<sub>D 6.3A R<sub>DS(on) 13.5 mΩ Package SO-8

In conclusion, the NTMS4807NR2G from ON Semiconductor is a high-performance, energy-efficient MOSFET that is well-suited for a variety of power management applications. Its robust design and advanced features ensure that it can meet the needs of even the most demanding electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4967 $59.6040
285+ $0.4077 $116.1945
440+ $0.3950 $173.8000
605+ $0.3823 $231.2915
785+ $0.3696 $290.1360
1,050+ $0.3315 $348.0750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,700 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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