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NTMS4917NR2G

Part No NTMS4917NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.2A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15.6nC @ 4.5V
Max Input Capacitance 1054pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 880mW (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1083943-NTMS4917NR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMS4917NR2G CAD Model

Description

ON Semiconductor NTMS4917NR2G - Power MOSFET

The ON Semiconductor NTMS4917NR2G is a high-performance Power MOSFET designed to address a wide range of applications requiring efficient power management and switching. This N-channel MOSFET utilizes ON Semiconductor's advanced technology to provide superior switching performance with low on-state resistance, contributing to energy savings and improved system reliability.

Key Features:

  • Low R<sub>DS(on): The NTMS4917NR2G boasts an impressively low on-state resistance, which minimizes conduction losses and enhances the overall efficiency of the system in which it is deployed.
  • High Continuous Drain Current (I<sub>D): It is capable of supporting a high continuous drain current, making it suitable for applications requiring significant power handling capabilities.
  • High Switching Speed: This device is engineered for fast switching speeds, which is essential for reducing switching losses and improving the performance of power conversion systems.
  • Robust Thermal Performance: The NTMS4917NR2G is designed with an optimal thermal footprint, ensuring reliable operation even under high-temperature conditions.
  • Gate Charge Optimization: The MOSFET features an optimized gate charge, which facilitates lower switching energy and reduces the drive power required, further contributing to the system's energy efficiency.

Applications:

The versatility of the NTMS4917NR2G allows it to be used in a variety of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Drives
  • Lighting Systems
  • Automotive Applications
  • High-Efficiency Power Management Designs

Package and Environmental Compliance:

The NTMS4917NR2G comes in a compact SO-8 package, which is not only space-saving but also conducive to efficient thermal management. ON Semiconductor is committed to environmental sustainability, and the NTMS4917NR2G complies with RoHS directives, ensuring that it is free from harmful substances and suitable for use in environmentally sensitive applications.

In summary, the ON Semiconductor NTMS4917NR2G Power MOSFET is a high-quality, energy-efficient solution for a wide range of power switching applications. Its advanced features and robust design make it a reliable and cost-effective choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5368 $59.0480
265+ $0.4405 $116.7325
410+ $0.4268 $174.9880
560+ $0.4130 $231.2800
725+ $0.3993 $289.4925
970+ $0.3580 $347.2600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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