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NTMS4935NR2G

Part No NTMS4935NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 52.1nC @ 10V
Max Input Capacitance 3639pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 810mW (Ta)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060688-NTMS4935NR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMS4935NR2G CAD Model

Description

ON Semiconductor NTMS4935NR2G Overview

The NTMS4935NR2G is a high-performance, Power MOSFET from ON Semiconductor, designed to deliver efficient power management and switching with low on-resistance and minimal power loss. This product is an excellent choice for a variety of applications, including power supplies, motor controls, and high-efficiency DC-DC converters.

Key Features

  • Low R<sub>DS(on): The NTMS4935NR2G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capacity: With the capability to handle high continuous drain currents, this MOSFET is suitable for applications requiring robust current handling.
  • Thermal Performance: The device is engineered for superior thermal performance, ensuring reliability and longevity even under high temperature operating conditions.
  • Power Dissipation: It features a substantial power dissipation rate, which allows for the effective handling of power without compromising the MOSFET's performance.

Applications

The NTMS4935NR2G is versatile and can be used in a wide array of applications. Here are some of the typical uses:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives and Controllers
  • Switching Regulators
  • Load/Power Switching

Product Specifications

This MOSFET comes in a compact package and is characterized by the following specifications:

  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Drain to Source Voltage (V<sub>DSS): 30V
  • Continuous Drain Current (I<sub>D): 7.7A
  • Power Dissipation (P<sub>D): 2.5W
  • Operating Temperature: -55°C to 150°C

Environmental and Quality Certifications

The NTMS4935NR2G complies with various environmental standards, ensuring that it is suitable for use in environmentally sensitive applications. It is lead-free, RoHS compliant, and manufactured under ON Semiconductor's quality management systems, which are certified to ISO/TS16949, ISO 9001, and ISO 14001 standards.

With its robust design, efficient performance, and compliance with environmental regulations, the NTMS4935NR2G is an ideal choice for engineers and designers looking for a reliable Power MOSFET solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.7184 $62.8736
9+ $12.8979 $116.0811
14+ $12.4948 $174.9272
20+ $12.0917 $241.8340
25+ $11.6886 $292.2150
34+ $10.4793 $356.2962
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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