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NTNS3190NZT5G

Part No NTNS3190NZT5G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.224A XLLGA3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 224mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.7nC @ 4.5V
Max Input Capacitance 15.8pF @ 15V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 120mW (Ta)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 100mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-XLLGA (0.62x0.62)
Dimension 3-XFDFN
Win Source Part Number 1083954-NTNS3190NZT5G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTNS3190NZT5G CAD Model

Description

ON Semiconductor NTNS3190NZT5G Overview

The NTNS3190NZT5G from ON Semiconductor is a high-performance, N-channel Power MOSFET that is designed to meet a wide range of applications requiring efficient power management and reliability. This MOSFET is a testament to ON Semiconductor's commitment to providing innovative solutions for power conversion and management in electronic systems.

Key Features

  • Low On-Resistance: The NTNS3190NZT5G boasts a low on-resistance, which ensures minimal power loss and heat generation during operation, making it suitable for high-efficiency power applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET can handle high-frequency operations, which is essential for applications such as switching power supplies and DC-DC converters.
  • Small Footprint: The device comes in a compact SOT-563 package, which is ideal for space-constrained applications, allowing designers to reduce the size of their power management solutions.
  • Low Threshold Voltage: The low threshold voltage enables the MOSFET to be driven at lower gate voltages, which can be beneficial in low-voltage applications and can contribute to overall power savings.
  • Robust Thermal Performance: The NTNS3190NZT5G is designed to handle significant power and dissipate heat effectively, which is critical for maintaining performance and longevity in demanding environments.

Applications

The versatile nature of the NTNS3190NZT5G makes it suitable for a variety of applications, including but not limited to:

  • Power Management in Portable Devices
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Circuits

Quality and Reliability

ON Semiconductor is known for its high standards of quality and reliability, and the NTNS3190NZT5G is no exception. It is designed to meet rigorous industry standards, ensuring stable performance and a long operational lifespan even under challenging conditions.

In conclusion, the NTNS3190NZT5G is a highly efficient, reliable, and versatile component that offers a compact solution for power management challenges across a wide range of electronic applications. Its combination of low on-resistance, high switching speed, and robust thermal performance makes it a valuable addition to any power management system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2208 $58.5120
640+ $0.1811 $115.9040
990+ $0.1755 $173.7450
1,365+ $0.1698 $231.7770
1,760+ $0.1642 $288.9920
2,355+ $0.1471 $346.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,400 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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