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NTP082N65S3F

Part No NTP082N65S3F
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 40A TO220-3 / N-Channel 650 V 40A (Tc) 313W (Tc) Through Hole TO-220-3
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series FRFET®, SuperFET® II
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3410 pF @ 400 V
Power Dissipation (Max) 313W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number NTP082
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1340625-NTP082N65S3F
Ultra Librarian 3D Model Ultra Librarian NTP082N65S3F CAD Model

Description

Introducing the NTP082N65S3F Power MOSFET from ON Semiconductor

The NTP082N65S3F is a cutting-edge power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance transistor is specifically crafted to meet the demanding requirements of modern power supply applications, offering an optimal balance between low on-resistance and high switching speed.

Key Features of the NTP082N65S3F

  • High Current Capability: With a continuous drain current (ID) of 84 A, the NTP082N65S3F can handle high-power applications with ease.
  • Low On-Resistance: Featuring an ultra-low RDS(on) of just 8 mΩ at VGS = 10 V, this MOSFET ensures minimal power loss and improved efficiency in your circuit.
  • High Voltage Threshold: The device can withstand a drain-source voltage (VDS) of up to 650 V, making it suitable for high-voltage applications.
  • Fast Switching Speed: The NTP082N65S3F boasts a rapid switching performance, critical for reducing switching losses and improving overall efficiency.
  • Robust Body Diode: The MOSFET comes with a rugged intrinsic body diode that provides fast recovery, further enhancing its performance in hard-switching applications.

Applications

The NTP082N65S3F is ideal for a wide range of applications, including:

  • Power supply units (PSUs)
  • Uninterruptible power supplies (UPS)
  • Electric vehicle (EV) charging stations
  • High-power DC-DC converters
  • Solar inverters
  • Induction heating systems

Package and Reliability

Encased in a TO-220 package, the NTP082N65S3F is designed for easy mounting and heat dissipation. Its robust design ensures long-term reliability, even under harsh conditions, making it a trustworthy choice for critical power management tasks.

ON Semiconductor's commitment to quality and performance is evident in the NTP082N65S3F MOSFET. With its exceptional efficiency, durability, and power handling capabilities, this component is an excellent choice for engineers looking to enhance their power systems' performance. Whether you're designing for industrial, automotive, or consumer electronics, the NTP082N65S3F brings a new level of power efficiency to your projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.7766 $54.2128
18+ $5.5603 $100.0854
28+ $5.3866 $150.8248
39+ $5.2128 $203.2992
50+ $5.0390 $251.9500
67+ $4.5178 $302.6926
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 496 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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