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Same model may have multiple batches, images only for reference.
NTP190N65S3HF
Same model may have multiple batches, images only for reference.

NTP190N65S3HF

Part No NTP190N65S3HF
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20A TO220-3  /  N-Channel 650 V 20A (Tc) 162W (Tc) Through Hole TO-220-3
Datasheet
NTP190N65S3HF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series FRFET®, SuperFET® III
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 400 V
Power Dissipation (Max) 162W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number NTP190
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 981935-NTP190N65S3HF
Ultra Librarian 3D Model Ultra Librarian NTP190N65S3HF CAD Model

Description

The 981935-NTP190N65S3HF is a MOSFET transistor from ON Semiconductor.

  • FET Type: N-channel
  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 20A (Tc) @ 25°C
  • Package: TO-220-3
  • Gate Charge (Qg): 34 nC @ 10 V
  • Rds On (Max): 190mOhm @ 10A, 10V
  • Vgs(th): 5V @ 430µA
  • Power Dissipation: 162W (Tc)
  • Mounting Type: Through-Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0977 $53.2701
30+ $3.3622 $100.8660
47+ $3.2572 $153.0884
64+ $3.1521 $201.7344
83+ $3.0470 $252.9010
110+ $2.7318 $300.4980
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Availability: 490 pieces
MOQ: 13 pcs
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