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NTR4170NT1G

Part No NTR4170NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 4.76nC @ 4.5V
Max Input Capacitance 432pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 480mW (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 084263-NTR4170NT1G
Family Name NTR4170N
Introduction Date June 11, 2008
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian NTR4170NT1G CAD Model

Description

ON Semiconductor NTR4170NT1G - N-Channel Power MOSFET

The NTR4170NT1G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, offering a compact and reliable solution for a wide range of power management applications.

Key Features

  • Low On-Resistance: The device features a low on-resistance of typically 30 mΩ, which enhances its efficiency by minimizing conduction losses.
  • High Continuous Drain Current: It supports a high continuous drain current (ID) of 7.7 A, allowing it to handle significant power levels in various applications.
  • Low Threshold Voltage: With a low threshold voltage (VGS(th)), this MOSFET can be easily driven at lower gate voltages, making it suitable for low-voltage applications.
  • Fast Switching Speed: The NTR4170NT1G is designed for fast switching applications, contributing to the reduction of switching losses and improving overall system performance.
  • ESD Protection: The device includes integrated ESD protection, ensuring robustness and reliability in sensitive applications where electrostatic discharges can be a concern.

Applications

The NTR4170NT1G MOSFET is well-suited for a variety of applications, including:

  • DC/DC converters
  • Power management in portable and battery-powered devices
  • Load switches
  • Motor control circuits
  • Switching regulators

Package and Environmental Compliance

The device comes in a compact SOT-23 package, which is ideal for space-constrained applications. It is also RoHS compliant, adhering to environmental regulations and reducing the impact on the environment.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the NTR4170NT1G is no exception. It undergoes rigorous testing and quality control measures to ensure it meets the high standards expected from ON Semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
440+ $0.1147 $50.4680
1,065+ $0.0941 $100.2165
1,645+ $0.0912 $150.0240
2,270+ $0.0883 $200.4410
2,935+ $0.0853 $250.3555
3,925+ $0.0765 $300.2625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 440 pcs
Order Increment : 1 pcs
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