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NTTFS5811NLTWG

Part No NTTFS5811NLTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 17A/53A 8WDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1570 pF @ 25 V
Power Dissipation (Max) 2.7W (Ta), 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number NTTFS5
Standard Package 5,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649974-NTTFS5811NLTWG
Ultra Librarian 3D Model Ultra Librarian NTTFS5811NLTWG CAD Model

Description

ON Semiconductor NTTFS5811NLTWG Overview

The ON Semiconductor NTTFS5811NLTWG is a high-performance, Power MOSFET that stands out for its efficient power management in a wide range of applications. This device is part of ON Semiconductor's extensive portfolio of electronic components designed to meet the stringent requirements of modern electronic circuits.

Key Features

  • Low On-Resistance: The NTTFS5811NLTWG features an ultra-low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and improves overall efficiency.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this Power MOSFET can handle substantial current loads, making it suitable for high-power applications.
  • Power-SO8 Package: Enclosed in a compact Power-SO8 package, the NTTFS5811NLTWG is designed for space-constrained applications while providing excellent thermal performance.
  • Low Gate Charge: The device has a low total gate charge (Q<sub>g), which results in reduced switching losses and faster switching speeds.
  • High Temperature Performance: It is capable of operating at high temperatures, ensuring reliability and performance stability under thermal stress.

Applications

The versatility of the NTTFS5811NLTWG allows it to be utilized in a variety of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Systems
  • Computing and Server Systems
  • Telecommunications Equipment

Advanced Technology

ON Semiconductor's commitment to innovation is evident in the NTTFS5811NLTWG, which incorporates advanced silicon technology to offer superior performance. This technology ensures that the device operates with high efficiency, which is critical in reducing energy consumption and heat generation in electronic systems.

Quality and Reliability

ON Semiconductor is known for its dedication to quality and reliability, and the NTTFS5811NLTWG is no exception. It is built to meet rigorous industry standards, ensuring long-term reliability and consistent performance in even the most demanding conditions.

In summary, the NTTFS5811NLTWG from ON Semiconductor is an exceptional choice for designers looking for a high-efficiency, reliable Power MOSFET that can handle high power densities and operate in challenging environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,895 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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