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SIJ494DP-T1-GE3

Part No SIJ494DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 36.8A PPAK SO-8  /  N-Channel 150 V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series ThunderFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1070 pF @ 75 V
Power Dissipation (Max) 69.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJ494
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIJ494DP-T1-GE3TR,SIJ494DP-T1-GE3CT,SIJ494DP-T1-GE3DKR
Standard Package 3,000
Win Source Part Number 1014335-SIJ494DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJ494DP-T1-GE3 CAD Model

Description

The SIJ494DP-T1-GE3 is an N-channel MOSFET (Metal Oxide) transistor from the ThunderFET® series of Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
  • Gate Charge (Qg) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 75 V
  • Power Dissipation (Max): 69.4W (Tc)
  • Gate Threshold Voltage: 4.5V @ 250μA
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Package: PowerPAK® SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8641 $55.9230
70+ $1.5295 $107.0650
105+ $1.4817 $155.5785
140+ $1.4339 $200.7460
185+ $1.3861 $256.4285
245+ $1.2427 $304.4615
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,900 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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