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NTTFS5820NLTWG

Part No NTTFS5820NLTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11A/37A 8WDFN  /  N-Channel 60 V 11A (Ta), 37A (Tc) 2.7W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1462 pF @ 25 V
Power Dissipation (Max) 2.7W (Ta), 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number NTTFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Win Source Part Number 1082922-NTTFS5820NLTWG
Ultra Librarian 3D Model Ultra Librarian NTTFS5820NLTWG CAD Model

Description

Introducing the NTTFS5820NLTWG Power MOSFET by ON Semiconductor

The NTTFS5820NLTWG is a cutting-edge Power MOSFET device engineered by ON Semiconductor, a renowned leader in the field of semiconductor solutions. This product is designed to cater to the demanding requirements of power efficiency and reliability in modern electronic applications. It is a perfect choice for designers looking to improve system performance in power management tasks.

Key Features

  • Low On-Resistance: The NTTFS5820NLTWG boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power losses and improved efficiency in switching applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant loads, making it suitable for high-power applications.
  • Advanced Trench Technology: Utilizing ON Semiconductor's advanced trench technology, the device ensures optimal performance and reliability.
  • Low Gate Charge: The reduced gate charge (Q<sub>G) of the NTTFS5820NLTWG minimizes switching losses, contributing to the overall energy efficiency of the system.

Applications

The versatility of the NTTFS5820NLTWG allows it to be used in a wide range of applications including:

  • DC/DC converters
  • Power supply units
  • Motor drives
  • Computing and server systems
  • Automotive components
  • Telecommunication equipment

Environmental and Quality Certifications

In line with ON Semiconductor's commitment to environmental stewardship and quality, the NTTFS5820NLTWG meets several industry standards:

  • RoHS compliant, ensuring the exclusion of hazardous substances.
  • PPAP capable, indicating its suitability for automotive industry standards.
  • Supported by ON Semiconductor's quality management system.

Technical Specifications

The NTTFS5820NLTWG operates within a wide temperature range and comes in a compact, surface-mount package that is both robust and designed for optimal thermal performance. Detailed technical specifications can be found in the comprehensive datasheet provided by ON Semiconductor.

Overall, the NTTFS5820NLTWG Power MOSFET from ON Semiconductor stands out as a high-performance component that offers efficiency, durability, and versatility for various high-demand applications.

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