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NTZD3156CT1G

Part No NTZD3156CT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 540mA, 430mA
Maximum Rds On at Id,Vgs 550 mOhm @ 540mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 72pF @ 16V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 1084051-NTZD3156CT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian NTZD3156CT1G CAD Model

Description

ON Semiconductor NTZD3156CT1G - Dual N-Channel Enhancement Mode Field Effect Transistor

The NTZD3156CT1G from ON Semiconductor is a highly efficient, dual N-channel enhancement mode field effect transistor (FET) designed for power management applications. This compact and versatile component is housed in a space-saving SOT-563 package, making it an ideal choice for portable and space-constrained electronic devices.

Key Features

  • Low On-Resistance: The NTZD3156CT1G boasts a low on-resistance of typically 60 mΩ at 4.5 V gate drive, which translates to reduced power losses and improved efficiency in operation.
  • High-Speed Switching: With its fast switching capabilities, this FET is well-suited for applications requiring high-speed operation, thereby enhancing overall system performance.
  • Dual N-Channel Configuration: The dual N-channel setup allows for flexibility in design, enabling the use of a single component for applications that would traditionally require two separate FETs.
  • Low Threshold Voltage: A low threshold voltage ensures that the NTZD3156CT1G can be controlled with lower gate voltages, making it compatible with a wide range of drive circuits and logic levels.
  • High Power and Current Handling: Despite its small size, the device is capable of handling a continuous drain current of 1.1 A, as well as power dissipation of 0.3 W, ensuring reliable performance in demanding situations.

Applications

The NTZD3156CT1G is suitable for a variety of applications, particularly where power efficiency and space savings are critical. Typical applications include:

  • Power management circuits
  • DC-DC converters
  • Battery management systems
  • Load switches
  • Portable electronic devices
  • Smartphone and tablet power management

Quality and Reliability

ON Semiconductor is known for its dedication to quality and reliability, and the NTZD3156CT1G is no exception. This component is designed to meet the rigorous standards of the electronics industry, ensuring a reliable performance in a wide range of environmental conditions. With its robust construction and proven design, the NTZD3156CT1G is a reliable choice for designers looking to incorporate efficient power management into their next project.

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