The NVB190N65S3F from ON Semiconductor represents a breakthrough in power MOSFET technology, designed for applications that demand high efficiency and robust performance. This device is a part of ON Semiconductor's portfolio of energy-efficient power solutions, offering exceptional power density and reliability for a wide range of applications including power supplies, converters, and motor drives.

Key Features:

• Advanced Technology: The NVB190N65S3F utilizes ON Semiconductor's state-of-the-art silicon technology, providing superior switching performance and high thermal conductivity.
• High Voltage Capability: With a drain-to-source voltage (V_DS) of 650V, this MOSFET can handle high voltage applications effortlessly, making it suitable for industrial and consumer level power systems.
• Low On-Resistance: Featuring an ultra-low on-resistance (R_DS(on)) of 190 mΩ, it ensures minimal conduction losses and improves overall efficiency.
• High Continuous Current: The device is capable of a continuous drain current (I_D) of 63A, allowing it to support high current operations with ease.
• Robust Thermal Performance: The NVB190N65S3F is designed to maintain stability under high-temperature conditions, thanks to its excellent thermal characteristics.

Applications:

• Solar inverters
• Uninterruptible power supplies (UPS)
• Switch Mode Power Supplies (SMPS)
• High-efficiency DC-DC converters
• Electric vehicle (EV) charging stations
• Motor control applications

The NVB190N65S3F is not only powerful but also ensures energy conservation, making it an environmentally friendly choice for modern electronic designs. Its robustness and high endurance to thermal and electrical stress provide a reliable solution for engineers looking to improve system longevity and performance.

ON Semiconductor's commitment to innovation is evident in the NVB190N65S3F MOSFET, offering designers a component that meets stringent requirements for efficiency, power density, and reliability. Whether it's for industrial power equipment or cutting-edge consumer electronics, this MOSFET is engineered to exceed expectations and drive technology forward.