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NVBG040N120SC1

Part No NVBG040N120SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS SJT N-CH 1200V 60A D2PAK-7 / N-Channel 1200 V 60A (Tc) 357W (Tc) Surface Mount D2PAK-7
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1789 pF @ 800 V
Power Dissipation (Max) 357W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab) , TO-263CA
Base Product Number NVBG040
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338628-NVBG040N120SC1
Ultra Librarian 3D Model Ultra Librarian NVBG040N120SC1 CAD Model

Description

The NVBG040N120SC1 is a cutting-edge Silicon Carbide (SiC) N-Channel MOSFET brought to you by ON Semiconductor, a renowned leader in the semiconductor industry. This high-performance power MOSFET is designed to cater to the demanding needs of modern energy-efficient power conversion systems. It is an ideal choice for applications that require high power density, reduced losses, and improved efficiency.

Key Features

  • High Breakdown Voltage: With a drain-to-source breakdown voltage of 1200V, the NVBG040N120SC1 is perfect for high voltage applications, providing robust performance and reliability.
  • Low On-Resistance: The MOSFET features an exceptionally low on-resistance (R<sub>DS(on)) of 40mΩ, which significantly reduces conduction losses and enhances overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET delivers high-speed performance with reduced switching losses, making it suitable for high-frequency power converters and inverters.
  • Reduced Parasitic Capacitance: The NVBG040N120SC1 boasts low input and output capacitance, which minimizes the Miller effect and enhances the switching speed and performance.
  • Robust Body Diode: The built-in SiC Schottky body diode provides fast reverse recovery time, low reverse recovery charge, and minimal reverse leakage current, which is ideal for hard-switching conditions.

Applications

The NVBG040N120SC1 is versatile and can be used in a broad range of applications, including:

  • Electric Vehicle (EV) chargers
  • Renewable energy systems like solar inverters and wind turbines
  • Uninterruptible power supplies (UPS)
  • High-performance power supply units
  • Switch-mode power supplies (SMPS)
  • Motor drives and traction

Quality and Reliability

ON Semiconductor is committed to delivering products of the highest quality and reliability. The NVBG040N120SC1 undergoes rigorous testing and quality assurance processes to ensure it meets the stringent standards expected by industry professionals and consumers alike. With its superior performance and durability, the NVBG040N120SC1 is a testament to ON Semiconductor's dedication to excellence in power management and semiconductor solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4067 $51.1005
36+ $2.7953 $100.6308
56+ $2.7079 $151.6424
77+ $2.6206 $201.7862
99+ $2.5332 $250.7868
133+ $2.2712 $302.0696
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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