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NVD4806NT4G

Part No NVD4806NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 76A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Rds On (Max) @ Id, Vgs 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2142 pF @ 12 V
Power Dissipation (Max) 1.4W (Ta), 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NVD480
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 650013-NVD4806NT4G
Ultra Librarian 3D Model Ultra Librarian NVD4806NT4G CAD Model

Description

ON Semiconductor NVD4806NT4G Overview

The NVD4806NT4G is a robust and efficient N-Channel MOSFET designed by ON Semiconductor, a renowned leader in the semiconductor industry. This power MOSFET is part of ON Semiconductor's high-performance portfolio and is engineered to deliver excellent power efficiency and reliability for a wide range of applications.

Key Features

  • High Current Capability: The NVD4806NT4G is capable of handling continuous drain currents up to 5.8 A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 58 mΩ at V<sub>GS = 10 V, this MOSFET ensures minimal power loss and improved efficiency.
  • High Thermal Performance: The device comes in a compact DPAK (TO-252) package, which provides excellent thermal conduction and heat dissipation characteristics.
  • Robust Voltage Rating: It has a drain-to-source voltage (V<sub>DSS) of 60 V, allowing it to be used in a variety of higher voltage applications.
  • Fast Switching Speed: The NVD4806NT4G is designed for fast switching, reducing losses during power conversion processes.
  • Gate Charge Optimized: This feature provides improved switching performance while reducing switching losses.

Applications

The NVD4806NT4G is ideal for a range of applications where high efficiency and power density are critical. These include:

  • Power Supply Converters
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Switching Regulators
  • Power Management Solutions

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The NVD4806NT4G is no exception, and it comes with the assurance of ON Semiconductor's rigorous testing and validation processes. Users can expect consistent performance and durability from this MOSFET, even in demanding environments.

Environmental Compliance

The NVD4806NT4G is also environmentally friendly, compliant with RoHS (Restriction of Hazardous Substances) regulations. This ensures that the device is free from certain hazardous materials, making it suitable for use in a variety of markets, including those with strict environmental requirements.

In summary, the NVD4806NT4G from ON Semiconductor is a powerful, efficient, and reliable solution for designers looking to optimize their power management systems with a high-performance N-Channel MOSFET.

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