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NVF2201NT1G

Part No NVF2201NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.3A SC70
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Input Capacitance 45pF @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 300mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Dimension 5-TSSOP, SC-70-5, SOT-353
Win Source Part Number 1084125-NVF2201NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVF2201NT1G CAD Model

Description

Product Overview: NVF2201NT1G by ON Semiconductor

The NVF2201NT1G is a high-performance, energy-efficient N-Channel Power MOSFET designed and manufactured by ON Semiconductor. This component is part of ON Semiconductor's extensive portfolio of MOSFETs that are engineered to deliver superior switching performance and high power efficiency in a wide range of applications. The NVF2201NT1G is particularly suitable for compact and power-sensitive designs, making it an excellent choice for modern electronic systems.

Key Features

  • Low On-Resistance: The device features a very low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency.
  • High-Speed Switching: NVF2201NT1G is optimized for fast switching speeds, reducing switching losses and enabling high-frequency operation.
  • Low Threshold Voltage: A low gate threshold voltage ensures that the MOSFET can be driven at lower voltages, which is beneficial for battery-operated devices.
  • ESD Protection: The MOSFET is equipped with built-in ESD protection, safeguarding the device from electrostatic discharges during handling and operation.
  • Compact Package: Housed in a small SOT-23 package, the NVF2201NT1G is ideal for space-constrained applications, allowing for a high density of components on a PCB.

Applications

Thanks to its robust performance characteristics, the NVF2201NT1G is suitable for a variety of applications, including but not limited to:

  • Power Management Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Load Switches
  • Battery Management Systems
  • Portable Electronic Devices

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the NVF2201NT1G is no exception. The device is manufactured to meet the highest industry standards, ensuring reliable performance even under challenging conditions. Additionally, it is RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Conclusion

The NVF2201NT1G N-Channel Power MOSFET from ON Semiconductor is a versatile and efficient solution for a broad range of electronic applications. Its low on-resistance, high-speed switching capabilities, and compact form factor make it an attractive option for designers looking to optimize power management in their devices. With ON Semiconductor's reputation for quality, the NVF2201NT1G stands out as a reliable and high-performing component in the field of power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8644 $60.5080
165+ $0.7093 $117.0345
255+ $0.6871 $175.2105
350+ $0.6650 $232.7500
450+ $0.6429 $289.3050
605+ $0.5763 $348.6615
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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