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NVF6P02T3G

Part No NVF6P02T3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A SOT-223 / P-Channel 20 V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223 (TO-261)
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Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V
Power Dissipation (Max) 8.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA
Base Product Number NVF6P02
Standard Package 4,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 852373-NVF6P02T3G
Ultra Librarian 3D Model Ultra Librarian NVF6P02T3G CAD Model

Description

The ON Semiconductor NVF6P02T3G is a high-performance P-Channel MOSFET that offers efficient power management and switching capabilities for a wide range of applications. Designed with the latest semiconductor technology, this MOSFET is an ideal choice for engineers and designers looking to enhance the performance of their electronic designs.

Key Features

  • Device Type: P-Channel MOSFET
  • Package: Supplied in a SuperSOT™-6 package, offering a compact footprint for space-sensitive applications.
  • Voltage Rating: The NVF6P02T3G has a drain-source voltage (V<sub>DS) of -20V, making it suitable for various low to medium voltage applications.
  • Current Capacity: It can handle a continuous drain current (I<sub>D) of -3.6A, providing ample current for a multitude of electronic circuits.
  • R<sub>DS(on): The device features a low on-resistance of 160 mΩ at V<sub>GS = -4.5V, ensuring high efficiency and reduced power losses during operation.
  • Gate Charge: The NVF6P02T3G has a low total gate charge (Q<sub>g) which enhances the switching performance and is beneficial for high-speed applications.

Applications

The versatile nature of the NVF6P02T3G P-Channel MOSFET allows it to be used in a variety of applications, including:

  • Power management systems
  • Load switch circuits
  • Battery management
  • DC/DC converters
  • Motor control
  • Portable electronic devices

Quality and Reliability

ON Semiconductor is renowned for its commitment to quality and reliability. The NVF6P02T3G MOSFET is no exception, with rigorous testing and quality control measures in place to ensure that it meets the high standards expected by the industry. It's a reliable choice for designers looking to incorporate a robust power management solution into their electronic projects.

Environmental Considerations

The NVF6P02T3G is a Pb-free, Halogen-free, and RoHS compliant device, reflecting ON Semiconductor's dedication to environmental responsibility. By choosing this MOSFET, developers are making an eco-friendly choice for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.1893 $50.3539
56+ $1.7964 $100.5984
87+ $1.7402 $151.3974
119+ $1.6841 $200.4079
154+ $1.6280 $250.7120
206+ $1.4596 $300.6776
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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