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NVMFD030N06CT1G

Part No NVMFD030N06CT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8DFN 5X6  /  Mosfet Array 2 N-Channel (Dual) 60V 7A (Ta), 19A (Tc) 3.2W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs 29.7mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 255pF @ 30V
Power - Max 3.2W (Ta), 23W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD030
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NVMFD030N06CT1GTR
Standard Package 1,500
Win Source Part Number 1017650-NVMFD030N06CT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD030N06CT1G CAD Model

Description

ON Semiconductor NVMFD030N06CT1G Overview

The NVMFD030N06CT1G is a high-performance, Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This device is designed to meet the rigorous demands of power regulation in modern electronic applications. It is particularly suitable for automotive applications, power supplies, and other power conversion and management tasks where efficiency and reliability are critical.

Key Features

  • Low On-Resistance: The NVMFD030N06CT1G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
  • High Current Capability: With the ability to handle high currents, this MOSFET is ideal for applications that require robust power handling capabilities.
  • Thermal Management: The device is encapsulated in a compact package that enhances thermal performance, ensuring reliability even under high temperature operating conditions.
  • Low Gate Charge: The low gate charge feature of the NVMFD030N06CT1G allows for faster switching speeds, which is essential for high-frequency power converters and inverters.
  • Single N-Channel: As a single N-Channel MOSFET, it offers simplicity in design and ease of integration into various circuit topologies.

Applications

The versatility of the NVMFD030N06CT1G makes it suitable for a wide range of applications. It is extensively used in:

  • Automotive systems, including electric power steering, DC/DC converters, and motor drives
  • Power supply units for computers, servers, and telecom infrastructure
  • Power management modules for renewable energy systems such as solar inverters
  • High-efficiency DC/DC converters in portable and consumer electronics

Quality and Reliability

ON Semiconductor is committed to delivering high-quality and reliable components. The NVMFD030N06CT1G is subjected to rigorous testing and quality control measures to ensure that it meets the industry standards for performance and longevity. Customers can trust this product for their critical power regulation needs in both commercial and industrial applications.

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