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NVMFS5C410NAFT1G

Part No NVMFS5C410NAFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 46A/300A 5DFN  /  N-Channel 40 V 46A (Ta), 300A (Tc) 3.9W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V
Power Dissipation (Max) 3.9W (Ta), 166W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500
Win Source Part Number 1206917-NVMFS5C410NAFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS5C410NAFT1G CAD Model

Description

ON Semiconductor's NVMFS5C410NAFT1G: A High-Efficiency Power MOSFET

The NVMFS5C410NAFT1G is a cutting-edge power MOSFET device manufactured by ON Semiconductor, known for its high efficiency and reliability in power management applications. This N-channel MOSFET is designed to meet the demanding requirements of modern electronic circuits, offering superior performance in a compact, surface-mount package.

Key Features:

  • Low On-Resistance: The NVMFS5C410NAFT1G boasts an incredibly low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall efficiency, making it ideal for high-performance power conversion systems.
  • High Current Capacity: With a continuous drain current (I<sub>D) rating of up to 85A, this MOSFET can handle high current loads, ensuring robust performance in applications such as power supplies and motor control circuits.
  • Advanced Packaging: Housed in a compact 5x6mm flat-lead package, the NVMFS5C410NAFT1G minimizes footprint and allows for efficient heat dissipation, which is critical in maintaining thermal stability during operation.
  • Low Gate Charge: The device features a low total gate charge (Q<sub>g), which translates to reduced switching losses and faster switching speeds. This characteristic is particularly beneficial in applications where high switching frequencies are required.
  • Optimized for Automotive Applications: This MOSFET is AEC-Q101 qualified, ensuring its reliability and performance under the harsh conditions typically found in automotive environments.

Applications:

The versatility of the NVMFS5C410NAFT1G makes it suitable for a wide range of applications, including:

  • Automotive Powertrain Systems
  • DC/DC Converters
  • Power Management for Computing and Telecom
  • Motor Drives
  • LED Lighting

ON Semiconductor's NVMFS5C410NAFT1G is an excellent choice for designers seeking a high-performance power MOSFET that combines efficiency, power density, and reliability. Whether it's for automotive, industrial, or consumer electronics, this MOSFET stands out as a top-tier component for sophisticated power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.1916 $50.2992
30+ $3.4393 $103.1790
46+ $3.3318 $153.2628
63+ $3.2243 $203.1309
81+ $3.1169 $252.4689
108+ $2.7944 $301.7952
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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