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NVMFS6H801NLT1G

Part No NVMFS6H801NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 24A/160A 5DFN / N-Channel 80 V 24A (Ta), 160A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta) , 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5126 pF @ 40 V
Power Dissipation (Max) 3.8W (Ta) , 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351911-NVMFS6H801NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H801NLT1G CAD Model

Description

The NVMFS6H801NLT1G is a cutting-edge, high-performance Power MOSFET brought to you by ON Semiconductor, a brand renowned for its innovative and reliable semiconductor solutions. This Power MOSFET is designed to meet the efficiency and power density needs of modern high-speed switching applications.

Key Features

  • Low R<sub>DS(on): This product boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Drain Current (I<sub>D): With its ability to support a high continuous drain current, it is well-suited for handling high-power applications without compromising performance.
  • Fast Switching Speed: The NVMFS6H801NLT1G is designed for fast switching, making it ideal for high-frequency circuits and contributing to reduced switching losses.
  • Single N-Channel: As a single N-Channel MOSFET, it offers simplicity and ease of use in various circuit configurations.
  • Thermally Enhanced Package: It comes in a compact, thermally enhanced package that ensures efficient heat dissipation, thereby improving reliability and longevity under high thermal conditions.

Applications

The NVMFS6H801NLT1G is versatile and can be employed in a wide array of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Computing Systems
  • Telecommunication Equipment
  • Automotive Applications

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability. The NVMFS6H801NLT1G Power MOSFET is no exception and has undergone rigorous testing to ensure it meets the stringent requirements for industrial and automotive applications. Users can trust in the durability and performance of this component for their critical power management needs.

Environmental Compliance

Adhering to environmental regulations, the NVMFS6H801NLT1G is RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances. ON Semiconductor demonstrates its commitment to environmental stewardship and sustainability through its product offerings.

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