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NVMFS6H848NLT1G

Part No NVMFS6H848NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 13A/59A 5DFN / N-Channel 80 V 13A (Ta), 59A (Tc) 3.7W (Ta), 73W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 13A, 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 40 V
Power Dissipation (Max) 3.7W, 73W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NVMFS6H848NLT1GDKR,488-NVMFS6H848NLT1GCT,488-NVMFS6H848NLT1GTR
Standard Package 1,500
Win Source Part Number 1323923-NVMFS6H848NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H848NLT1G CAD Model

Description

The NVMFS6H848NLT1G is a state-of-the-art MOSFET designed by ON Semiconductor, renowned for its high efficiency and reliability in power management applications. This advanced power MOSFET is engineered to meet the rigorous demands of modern electronic devices, providing a compact, high-performance solution for a wide range of applications, including computing, automotive, industrial, and telecommunications.

Key Features

  • Low R<sub>DS(on): This MOSFET features a low on-resistance, which translates to reduced conduction losses and improved power efficiency, making it ideal for high-efficiency power supplies and converters.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current, enabling it to handle high-power applications with ease.
  • Low Total Gate Charge (Q<sub>g): The device has a low total gate charge, which results in faster switching speeds and reduced switching losses.
  • Single P-Channel: As a P-Channel MOSFET, it is often used in high-side switch configurations and can be driven by a simpler gate drive circuit compared to N-Channel MOSFETs.
  • Power Trench® Technology: This proprietary technology from ON Semiconductor helps to minimize on-state resistance while maintaining superior switching performance and reliability.
  • Thermal Management: The NVMFS6H848NLT1G comes in a compact 5x6 mm² footprint with an exposed pad for enhanced thermal performance, ensuring the device operates within its specified temperature range even under high power conditions.

Applications

The versatility of the NVMFS6H848NLT1G allows it to be used in various applications that require efficient power management and control. These include:

  • DC-DC Converters
  • Power Supply Modules
  • Battery Management Systems
  • Load Switches
  • Motor Control Circuits

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and product quality. The NVMFS6H848NLT1G complies with various environmental standards, ensuring that it meets the requirements for RoHS compliance and is free from harmful substances. Additionally, the product is manufactured in facilities that are certified for quality management systems, such as ISO 9001, ensuring consistent product quality and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8647 $52.7823
21+ $4.8121 $101.0541
33+ $4.6617 $153.8361
45+ $4.5113 $203.0085
58+ $4.3610 $252.9380
77+ $3.9098 $301.0546
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,090 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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