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NVMTSC1D3N08M7TXG

Part No NVMTSC1D3N08M7TXG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 46A/348A 8DFNW / N-Channel 80 V 46A (Ta), 348A (Tc) 5.1W (Ta), 287W (Tc) Surface Mount 8-DFNW (8.3x8.4)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta) , 348A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.25mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14530 pF @ 40 V
Power Dissipation (Max) 5.1W (Ta) , 287W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN
Base Product Number NVMTSC1
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337227-NVMTSC1D3N08M7TXG
Ultra Librarian 3D Model Ultra Librarian NVMTSC1D3N08M7TXG CAD Model

Description

Product Overview: NVMTSC1D3N08M7TXG by ON Semiconductor

The NVMTSC1D3N08M7TXG is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This MOSFET is part of ON Semiconductor's comprehensive portfolio of energy-efficient devices, engineered to meet the demanding requirements of modern electronic circuits.

Featuring advanced trench technology, the NVMTSC1D3N08M7TXG boasts a low on-resistance (R<sub>DS(on)) which significantly reduces conduction losses, making it an ideal choice for high-efficiency power management applications. The device is housed in a compact, surface-mount package, specifically the Power 33 DFN, which ensures a minimal footprint on the PCB while providing excellent thermal performance.

With a continuous drain current (I<sub>D) of up to 30 A and a drain-source voltage (V<sub>DS) of 80 V, this MOSFET can handle a wide range of applications, from power supplies to motor controls. Its low gate charge (Q<sub>g) and fast switching capabilities make it suitable for high-speed switching applications, further contributing to the overall system efficiency.

The NVMTSC1D3N08M7TXG is also characterized by its robustness, featuring a 100% avalanche tested design. This ensures reliable operation even under extreme conditions, making it a trustworthy component for critical applications. Additionally, the device is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability and the production of eco-friendly products.

In summary, the NVMTSC1D3N08M7TXG from ON Semiconductor represents a blend of performance, efficiency, and reliability. It is designed to cater to a broad spectrum of power applications where space is at a premium and energy efficiency is paramount. Whether deployed in power supply units, DC-DC converters, or motor drives, this Power MOSFET is a solid choice for designers looking to optimize their systems for performance and power conservation.

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