The IXFN32N100Q3 is a MOSFET (Metal Oxide) transistor manufactured by IXYS. It is a high-performance product that is designed to be used in various applications, including power supplies, motor control, and lighting. The IXFN32N100Q3 has a N-Channel FET type and a drain-to-source voltage (Vdss) of 1000 V. The current-continuous drain (Id) is 28A (Tc), and the Rds On (Max) @ Id, Vgs is 320mOhm @ 16A, 10V. This product has a power dissipation (Max) of 780W (Tc) and a gate charge (Qg) (Max) @ Vgs of 195 nC @ 10 V. The IXFN32N100Q3 is a reliable and efficient product that delivers high performance.