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IXFN32N100Q3

Part No IXFN32N100Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 28A SOT227B / N-Channel 1000 V 28A (Tc) 780W (Tc) Chassis Mount SOT-227B
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9940 pF @ 25 V
Power Dissipation (Max) 780W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN32
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -IXFN32N100Q3
Standard Package 10
Win Source Part Number 1324117-IXFN32N100Q3
Ultra Librarian 3D Model Ultra Librarian IXFN32N100Q3 CAD Model

Description

The IXFN32N100Q3 is a MOSFET (Metal Oxide) transistor manufactured by IXYS.

  • FET Type: N-Channel
  • Drain-to-Source Voltage (Vdss): 1000 V
  • Current-Continuous Drain (Id): 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
  • Power Dissipation (Max): 780W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V

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