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BUK7514-60E,127

Part No BUK7514-60E,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 58A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 22.9nC @ 10V
Max Input Capacitance 1730pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025219-BUK7514-60E,127
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian BUK7514-60E,127 CAD Model

Description

The BUK7514-60E,127 is a high-performance PowerMOS transistor manufactured by NXP Semiconductors. This robust component is designed to handle a wide range of applications, including automotive, industrial, and consumer electronics, where efficient power management and high reliability are essential.

Key Features

  • Low On-State Resistance: The BUK7514-60E,127 boasts an exceptionally low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency. This makes it an ideal choice for applications requiring high current handling with minimal power loss.
  • High-Speed Switching: Engineered for fast switching performance, this PowerMOS transistor is capable of operating at high frequencies, which is crucial for modern power conversion and regulation circuits.
  • Enhanced Thermal Performance: With an advanced silicon design and superior packaging, the BUK7514-60E,127 offers excellent thermal characteristics, ensuring stable operation even under high load conditions.
  • Robustness: The device is designed to withstand harsh conditions, featuring a rugged construction that provides protection against overvoltage, overcurrent, and thermal runaway scenarios.

Applications

The versatility of the BUK7514-60E,127 makes it suitable for a diverse range of applications, including:

  • DC-DC converters
  • Motor drives
  • Power management systems
  • Battery management
  • Switching regulators

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 60V Continuous Drain Current (I<sub>D) 75A Power Dissipation (P<sub>D) 110W Operating Temperature Range -55°C to +175°C Package TO-220

The BUK7514-60E,127 is a testament to NXP's commitment to providing high-quality, reliable semiconductor products. Whether you're designing a sophisticated power supply or a rugged motor control system, this PowerMOS transistor is engineered to deliver optimal performance and durability.

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