EN
  • EN
  • DE

NVMYS4D1N06CLTWG

Part No NVMYS4D1N06CLTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 22A/100A LFPAK4
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Win Source Part Number 2000071-NVMYS4D1N06CLTWG
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
Power Dissipation (Max) 3.7W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK
Win Source Part Number Cross
Category Discrete Semiconductor Products
Packaging Tape and Reel
Operating Temperature Range -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian NVMYS4D1N06CLTWG CAD Model

Description

The NVMYS4D1N06CLTWG is a high-performance, Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This device is designed to address the demanding requirements of power conversion and management in modern electronic systems. It is particularly well-suited for applications in the automotive industry, renewable energy systems, power supply units, and any other systems that require efficient power control.

Key Features

  • Low RDS(on): The device boasts an extremely low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Current Capacity: With the ability to handle a significant amount of current, the NVMYS4D1N06CLTWG is ideal for high-power applications.
  • Robust Thermal Performance: The MOSFET is designed to operate reliably even at high temperatures, ensuring performance stability and longevity.
  • Advanced Packaging: Enclosed in a compact and durable package, the device is both space-saving and capable of withstanding mechanical stress, making it suitable for rugged environments.
  • Automotive Grade: The product meets stringent automotive industry standards, assuring high reliability and performance under the challenging conditions typical of automotive applications.

Applications

The versatile nature of the NVMYS4D1N06CLTWG MOSFET allows it to be implemented in a variety of applications, including but not limited to:

  • Automotive systems such as Electric Power Steering (EPS), DC/DC converters, and motor drives
  • Power management circuits in renewable energy systems like solar inverters and wind turbines
  • High-efficiency power supplies for servers, telecom, and networking equipment
  • Brushed and brushless DC motor control circuits

Conclusion

The NVMYS4D1N06CLTWG from ON Semiconductor is a testament to the company's commitment to providing advanced semiconductor solutions that lead to a smarter, greener, and more efficient future. Whether it's for automotive, industrial, or consumer electronics, this Power MOSFET is engineered to deliver outstanding performance and reliability.

You May Also Be Interested in

NXP / Nexperia
N-channel TrenchMOS transistor
Need more? Email Us
Texas Instruments
N-CHANNEL NEXFET POWER MOSFET / Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Lowest to $2.8757
Panjit
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Lowest to $0.0508
Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410
ON Semiconductor
Ultrahigh-Speed Switching Applications
Lowest to $0.4123
Hitachi, Ltd
Silicon P Channel MOS FET Low FrequencyPower Switching
Need more? Email Us
Infineon Technologies
OptiMOSTM Power-MOSFET
Lowest to $0.7540
Fairchild/ON Semiconductor
200V N-Channel MOSFET
Need more? Email Us

Top Sellers

FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.5143
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0357
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $7.4300
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.9895
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.8196
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $41.3948
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.4125
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess