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NVMYS8D0N04CTWG

Part No NVMYS8D0N04CTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 38W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK
Base Product Number NVMYS8
Other Names NVMYS8D0N04CTWGOSTR,NVMYS8D0N04CTWGOSCT,NVMYS8D0N04CTWGOSDKR,NVMYS8D0N04CTWGOS,NVMYS8D0N04CTWGOS
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278215-NVMYS8D0N04CTWG
Ultra Librarian 3D Model Ultra Librarian NVMYS8D0N04CTWG CAD Model

Description

The ON Semiconductor NVMYS8D0N04CTWG is a cutting-edge N-channel Power MOSFET designed to deliver high efficiency and power density in a wide array of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions and innovative semiconductor technology to its customers.

The NVMYS8D0N04CTWG is built using an advanced silicon technology that enables it to operate with lower on-resistance and reduced gate charge, leading to minimized conduction and switching losses. The result is a MOSFET that is not only robust but also highly efficient, making it ideal for high-performance power management tasks.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance, which translates to reduced voltage drops across the MOSFET and enhances overall efficiency.
  • Reduced Gate Charge: With a lower gate charge, the NVMYS8D0N04CTWG can switch faster and with less power, making it suitable for high-frequency applications.
  • High Current Capability: This MOSFET is capable of handling high currents, which is crucial for power-intensive applications.
  • Robust Thermal Performance: The device is designed to perform reliably even under high-temperature conditions, ensuring longevity and consistent performance.
  • Environmentally Friendly: The NVMYS8D0N04CTWG is RoHS compliant, meaning it meets the restrictions for the use of certain hazardous substances in electrical and electronic equipment.

Applications

The versatility of the NVMYS8D0N04CTWG allows it to be used in a broad range of applications. It is particularly well-suited for power supply circuits, DC-DC converters, motor drives, and other power management systems where efficiency is paramount. Its reliability and performance also make it an excellent choice for automotive applications, renewable energy systems, and high-density power modules.

Conclusion

The ON Semiconductor NVMYS8D0N04CTWG is a powerful solution for modern electronic systems requiring efficient power management. Its advanced features and robust design ensure that it can meet the needs of a wide variety of applications, delivering both performance and reliability. With its focus on energy efficiency, this MOSFET is an ideal choice for designers looking to create environmentally friendly and cost-effective products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.0971 $52.3884
10+ $10.7463 $107.4630
15+ $10.4105 $156.1575
20+ $10.0747 $201.4940
26+ $9.7389 $253.2114
35+ $8.7314 $305.5990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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