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NVTFS5116PLWFTWG

Part No NVTFS5116PLWFTWG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 6A 8WDFN / P-Channel 60 V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1258 pF @ 25 V
Power Dissipation (Max) 3.2W (Ta), 21W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN
Base Product Number NVTFS5116
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Win Source Part Number 1008794-NVTFS5116PLWFTWG
Ultra Librarian 3D Model Ultra Librarian NVTFS5116PLWFTWG CAD Model

Description

ON Semiconductor NVTFS5116PLWFTWG Overview

The NVTFS5116PLWFTWG is a high-performance, Power MOSFET product from ON Semiconductor, designed to meet the rigorous standards of today's electronic industry. This component is engineered to provide efficient power conversion and control in a wide range of applications, including computing, automotive, power supply, and consumer electronics.

At the heart of this Power MOSFET is advanced technology that enables it to operate with low on-resistance and minimal gate charge, making it an ideal choice for high-efficiency power management tasks. Its compact footprint, combined with exceptional thermal performance, allows for space-saving PCB designs while maintaining high reliability and performance.

Key Features

  • Low RDS(on): Offers reduced conduction losses, which enhances overall energy efficiency.
  • High Continuous Drain Current (ID): Suitable for applications requiring high current handling capability.
  • Fast Switching Speed: Enables high-frequency operation, which is crucial for reducing the size of passive components and improving power density.
  • Thermal Management: The package is designed for excellent heat dissipation, ensuring stable operation under varying conditions.
  • Single N-Channel: Provides simplicity in design and ease of integration into various circuit configurations.

Applications

The versatility of the NVTFS5116PLWFTWG allows it to be utilized in a multitude of applications that require efficient power handling and switching. It is particularly well-suited for synchronous rectification in DC/DC converters, load switch applications, and power management tasks within complex electronic systems.

Quality and Reliability

ON Semiconductor is committed to delivering products that adhere to the highest standards of quality and reliability. The NVTFS5116PLWFTWG is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry. Customers can trust this Power MOSFET to provide consistent performance and longevity in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8176 $53.1440
150+ $0.6708 $100.6200
235+ $0.6499 $152.7265
320+ $0.6289 $201.2480
415+ $0.6079 $252.2785
555+ $0.5451 $302.5305
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,834 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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