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SMMUN2116LT1G

Part No SMMUN2116LT1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 50V SOT23-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr onsemi
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number SMMUN2116
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names ONSONSSMMUN2116LT1G,2156-SMMUN2116LT1G-OS
Standard Package 3,000
Win Source Part Number 1094533-SMMUN2116LT1G
Ultra Librarian 3D Model Ultra Librarian SMMUN2116LT1G CAD Model

Description

ON Semiconductor SMMUN2116LT1G Bipolar Transistor

The ON Semiconductor SMMUN2116LT1G is a high-performance PNP bipolar transistor that offers a perfect balance of efficiency and reliability for a wide array of applications. This semiconductor device is designed to meet the stringent requirements of modern electronic circuits, providing solid performance in a compact SOT-23 package.

Key Features

  • Transistor Type: This component is a PNP bipolar junction transistor (BJT), which is widely used for amplification and switching purposes.
  • Voltage Ratings: It can handle a collector-base voltage (VCBO) of -50V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V, making it suitable for medium voltage applications.
  • Current Capacity: The SMMUN2116LT1G has a continuous collector current (IC) rating of -1A, allowing it to drive moderate loads with ease.
  • Power Dissipation: With a power dissipation (PD) of 225mW, it can effectively handle thermal energy in various operating conditions.
  • High Gain Bandwidth Product: It features a transition frequency (fT) of 50MHz, providing a high gain-bandwidth product that is ideal for amplification in RF and other high-frequency applications.
  • Package: The transistor comes in a small SOT-23 surface-mount package, which is perfect for applications where space is at a premium.

Applications

The SMMUN2116LT1G is suitable for a diverse range of applications including, but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching circuits in power management systems
  • Regulation circuits in power supplies
  • Control circuits in embedded systems

ON Semiconductor's commitment to quality ensures that the SMMUN2116LT1G transistor is manufactured to the highest standards, offering reliable performance for designers and engineers looking to create efficient and durable electronic products. Whether you're working on consumer electronics, industrial control systems, or automotive applications, the SMMUN2116LT1G provides the functionality and dependability that professionals demand.

With its robust construction and proven semiconductor technology, the SMMUN2116LT1G from ON Semiconductor is an excellent choice for your circuit design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,500+ $0.0386 $57.9000
3,640+ $0.0318 $115.7520
5,640+ $0.0307 $173.1480
7,785+ $0.0297 $231.2145
10,045+ $0.0288 $289.2960
13,455+ $0.0258 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,310 pieces
MOQ: 1500 pcs
Order Increment : 1 pcs
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