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SMUN5311DW1T1G

Part No SMUN5311DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R / TRANS PREBIAS NPN/PNP SOT363
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Rohs State rohs
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 115073-SMUN5311DW1T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SMUN5311DW1
Introduction Date December 02, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SMUN5311DW1T1G CAD Model

Description

ON Semiconductor SMUN5311DW1T1G - Dual PNP Transistor

The SMUN5311DW1T1G is a high-performance dual PNP transistor designed and manufactured by ON Semiconductor, a leading name in the semiconductor industry. This device is engineered to offer excellent current gain and saturation voltage, making it an ideal choice for a wide range of applications, including signal processing, power management, and amplification circuits. Its compact surface-mount package allows for efficient use of PCB space, which is critical in modern electronic designs.

Key Features:

  • Transistor Type: Dual PNP Bipolar Junction Transistor (BJT)
  • Configuration: Dual
  • Collector-Emitter Voltage (VCEO): -50V
  • Collector-Base Voltage (VCBO): -60V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -100mA
  • DC Current Gain (hFE): 120 at 10mA, -5V
  • Power Dissipation (Pd): 250mW
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Package and Quality:

The SMUN5311DW1T1G comes in a compact SOT-363 package, which is also known as SC-88 or SC70-6. This small and thin profile package is ideal for applications where space-saving is a priority. The device is provided in tape and reel packaging, facilitating automated assembly processes and ensuring safe delivery and handling.

Applications:

With its dual PNP transistor design, the SMUN5311DW1T1G is suitable for a variety of electronic applications. It is commonly used in power management solutions, such as voltage regulators and switches, as well as in signal processing tasks, including amplification, buffering, and filtering. Its reliability and efficiency also make it a preferred choice for consumer electronics, portable devices, and industrial control systems.

Quality and Reliability:

ON Semiconductor is committed to delivering high-quality and reliable components. The SMUN5311DW1T1G is no exception and is manufactured under strict quality control standards. It is designed to meet or exceed the requirements of the electronic industry, ensuring performance and reliability in even the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 529,865 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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