The 2SB767-R is a PNP silicon epitaxial transistor manufactured by Panasonic. It is primarily designed for switching and amplification applications in audio and general-purpose electronic circuits. This transistor offers moderate power dissipation and good current gain characteristics.

Applications

• Audio amplifiers (small signal)
• Switching circuits
• Driver stages
• Electronic ballast circuits
• General-purpose amplification

Features

• Medium power dissipation
• High current gain
• Low collector saturation voltage
• TO-92 package
• Complementary NPN available

Benefits

• Versatile use: Suitable for both amplification and switching applications.
• Easy to implement: TO-92 package simplifies board mounting.
• Good amplification: High current gain ensures efficient signal amplification.
• Efficient switching: Low saturation voltage allows for efficient switching performance.

Additional Details

The 2SB767-R has a typical collector-emitter voltage of -50V, a collector current of -0.8A, and a power dissipation of 0.8W. The TO-92 package is widely used for small signal transistors due to its compact size and ease of use. Detailed electrical characteristics, including gain-bandwidth product and saturation voltage, are available in the datasheet. For optimal performance, proper biasing and thermal management should be considered. It can be paired with a complementary NPN transistor for push-pull amplifier applications.