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2SD1485

Part No 2SD1485
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Description Silicon NPN triple diffusion planar type(For high power amplification)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Panasonic
Win Source Part Number 1126246-2SD1485
Manufacturer Homepage www.panasonic.com/industrial/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1485 CAD Model

Description

The 2SD1485 is an NPN silicon epitaxial transistor manufactured by Panasonic. It is designed for use in high-voltage switching applications. This transistor is commonly found in power supplies, motor control circuits, and lighting control systems.

Applications

  • Power supplies
  • Motor control circuits
  • Lighting control systems
  • Inverters
  • High-voltage switching circuits

Features

  • High collector-emitter voltage (VCEO)
  • High current gain (hFE)
  • Low saturation voltage (VCE(sat))
  • Fast switching speed
  • NPN polarity

Benefits

  • Provides reliable high-voltage switching
  • Efficient power conversion in power supplies
  • Precise motor control with high gain
  • Efficient switching in lighting control
  • Reduces power loss with low saturation voltage

Additional Details

The 2SD1485 typically features a high collector-emitter voltage (VCEO) rating, enabling it to withstand high voltage levels without breakdown. The high current gain (hFE) ensures that a small base current can control a large collector current. The low saturation voltage (VCE(sat)) minimizes power dissipation during switching. It's designed for switching speeds that are crucial in high-frequency applications. The device is typically packaged in a through-hole package such as TO-220, facilitating easy mounting and heat sinking. The operating temperature range generally spans from -55°C to +150°C. Proper heat sinking is often required when using this transistor at its maximum rated power. The transistor's datasheet provides detailed electrical characteristics and safe operating area (SOA) information, which are essential for designing reliable circuits. The base-emitter voltage (VBE) and collector-emitter breakdown voltage (VCEO) are important parameters for circuit design and ensuring safe operation of the transistor. It is designed for fast switching, improving efficiency in switching applications.

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