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Same model may have multiple batches, images only for reference.
DRA2123J0L Real Image
Same model may have multiple batches, images only for reference.

DRA2123J0L

Part No DRA2123J0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW MINI3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Panasonic Electronic Components
Packaging Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce 80 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 500μA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 200mW
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package Mini3-G3-B
Part Number Series DRA2123
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 801970-DRA2123J0L
Ultra Librarian 3D Model Ultra Librarian DRA2123J0L CAD Model

Description

The 801970-DRA2123J0L PNP-pre-biased transistor from Panasonic Electronic Components is a PNP-pre-biased transistor.

  • Maximum Power: 200mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Package: Mini3-G3-B
  • Mounting: Reel
  • DC Current Gain: 80 @ 5mA @ 10V
  • Vce Saturation: 250mV @ 500μA @ 10mA
  • Resistor-Base: 2.2kOhms
  • Resistor-Emitter Base: 47kOhms
  • Case/Package: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.0938 $58.1560
1,500+ $0.0771 $115.6500
2,325+ $0.0746 $173.4450
3,200+ $0.0722 $231.0400
4,140+ $0.0698 $288.9720
5,540+ $0.0626 $346.8040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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