The UN216-(TX) is a silicon epitaxial planar type transistor manufactured by Panasonic. It is designed for use in various amplifier and switching applications.

Applications

• Audio Amplifiers
• High-Speed Switching Circuits
• Driver Stages
• General Purpose Amplification

Features

• Low Collector-Emitter Saturation Voltage
• High Collector Current Capability
• Excellent High-Frequency Response
• Small signal amplifier
• Epitaxial Planar Structure

Benefits

• Improved Circuit Efficiency due to low saturation voltage
• Can handle higher power levels in amplifier circuits
• Suitable for high-speed switching operations
• Reliable performance due to planar structure

Technical Specifications

While specific electrical characteristics like VCEO, IC, hFE, and fT vary depending on the application circuit, typical values for similar transistors in this category are:

• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 150mA
• Power Dissipation (PD): 250mW
• DC Current Gain (hFE): 100 to 400 (typical)
• Transition Frequency (fT): 100 MHz

These values are representative and should be verified with the manufacturer's datasheet for the specific UN216-(TX) variant used. The transistor is typically packaged in a small signal package (e.g., SOT-23) for surface mount assembly.