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Same model may have multiple batches, images only for reference.
UNR211H00L Panasonic
Same model may have multiple batches, images only for reference.

UNR211H00L

Part No UNR211H00L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW MINI3
Datasheet
UNR211H00L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package Mini3-G1
Win Source Part Number 109314-UNR211H00L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR211H00L CAD Model

Description

The Panasonic Electronic Components UNR211H00L is a PNP pre-biased transistor in Mini3-G1 package.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain: 30 @ 5mA and 10V
  • Maximum Power Dissipation: 200mW
  • Collector Cut-Off Current: 500nA
  • Maximum Vce (sat): 250mV @ 300μA and 10mA
  • Status: obsolete (EOL)
  • Mounting Technology: SMD (SMT)
  • Frequency Transition: 150MHz
  • Base and Emitter Base Resistors: 2.2k and 10k ohms respectively

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