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Same model may have multiple batches, images only for reference.
UNR52ANG0L Panasonic
Same model may have multiple batches, images only for reference.

UNR52ANG0L

Part No UNR52ANG0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SMINI3
Datasheet
UNR52ANG0L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SMini3-F2
Win Source Part Number 108828-UNR52ANG0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR52ANG0L CAD Model

Description

The Panasonic Electronic Components UNR52ANG0L is a discrete semiconductor product that comes in a reel-TR packaging and has an SMD (SMT) mounting.

  • Transition Frequency: 150MHz
  • Transistor Polarity: NPN-pre-biased
  • Resistor-Base (R1) (Ohms): 4.7k
  • Resistor-Emitter Base (R2) (Ohms): 47k
  • Lifecycle Status: The product is obsolete (EOL)
  • Case/Package: SMini3-F2
  • Maximum Current Collector: 80mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 250mV @ 300μA, 10mA
  • Collector Cut-Off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 5mA, 10V
  • Maximum Power Dissipation: 150mW

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