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Same model may have multiple batches, images only for reference.
UNR921TJ0L Panasonic
Same model may have multiple batches, images only for reference.

UNR921TJ0L

Part No UNR921TJ0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 125MW SSMINI3
Datasheet
UNR921TJ0L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini3-F1
Win Source Part Number 100634-UNR921TJ0L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UNR921TJ0L CAD Model

Description

The Panasonic Electronic Components UNR921TJ0L is a pre-biased NPN transistor designed for use in discrete semiconductor products.

  • Frequency Transition: 150MHz
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 80 @ 5mA, 10V
  • Maximum Power Dissipation: 125mW
  • Collector Cut-off Current (Max): 500nA
  • Package: SSMini3-F1
  • Mounting Technology: SMD (SMT)

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