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Same model may have multiple batches, images only for reference.
SPI11N60S5BKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI11N60S5BKSA1

Part No SPI11N60S5BKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI11N60S5BKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI11N
Other Names SP000680992,SP000013033,SPI11N60S5,SPI11N60S5IN,SPI11N60S5,SPI11N60S5XK,SPI11N60S5X,SPI11N60S5IN
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278315-SPI11N60S5BKSA1
Ultra Librarian 3D Model Ultra Librarian SPI11N60S5BKSA1 CAD Model

Description

The Infineon Technologies SPI11N60S5BKSA1 is an N-Channel CoolMOS™ MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Drain to Source Voltage: 600 V
  • Continuous Drain Current: 11 A
  • Maximum On-Resistance: 380 mOhm @ 7 A and 10 V
  • Gate Charge: 54 nC @ 10 V
  • Input Capacitance: 1460 pF @ 25 V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature Range: -55°C to 150°C

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170+ $2.0393 $346.6810
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