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XN0121000L Real Image1 XN0121000L Real Image2
Same model may have multiple batches, images only for reference.
XN0121000L Real Image1 XN0121000L Real Image2
XN0121000L Real Image1 XN0121000L Real Image2
Same model may have multiple batches, images only for reference.

XN0121000L

Part No XN0121000L
Manufacturer Panasonic
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W MINI5
Datasheet
XN0121000L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package Mini5-G1
Win Source Part Number 1119452-XN0121000L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XN0121000L CAD Model

Description

The Panasonic Electronic Components Dual NPN Pre-Biased Discrete Transistor is a reliable and high-quality transistor that is ideal for a variety of electronic applications.

  • Frequency Transition: 150MHz
  • Package: Mini5-G1
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Saturation Voltage: 250mV @ 300μA and 10mA
  • Collector Cut-Off Current: 500nA
  • Typical Gain (hFE) (Min): 160 @ 5mA and 10V
  • Maximum Power Dissipation: 300mW
  • Status: obsolete (EOL)
  • Category: Discrete Semiconductor Products
  • Popularity: medium
  • Supply and Demand Status: balanced

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