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BSS123_R1_00001

Part No BSS123_R1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description SOT-23, MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Panjit International Inc.
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number BSS123
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376821-BSS123_R1_00001
Ultra Librarian 3D Model Ultra Librarian BSS123_R1_00001 CAD Model

Description

The BSS123 is an N-channel MOSFET transistor manufactured by Panjit International Inc.

  • Series: BSS123
  • Package: SOT-23
  • Drain-to-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 170mA @ 25°C
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Gate Charge (Qg): 1.8nC @ 10V
  • On-Resistance (Rds On): 6Ohm @ 170mA, 10V
  • Input Capacitance (Ciss): 45pF @ 25V
  • Power Dissipation: 500mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,175+ $0.0427 $50.1725
2,850+ $0.0351 $100.0350
4,415+ $0.0340 $150.1100
6,080+ $0.0329 $200.0320
7,865+ $0.0318 $250.1070
10,530+ $0.0285 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,030 pieces
MOQ: 1175 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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