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NTD14N03R-1G

Part No NTD14N03R-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 2.5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 1.8nC @ 5V
Max Input Capacitance 115pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.04W (Ta), 20.8W (Tc)
Maximum Rds On at Id,Vgs 95 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083746-NTD14N03R-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD14N03R-1G CAD Model

Description

ON Semiconductor NTD14N03R-1G Power MOSFET

The NTD14N03R-1G from ON Semiconductor is a high-performance Power MOSFET designed to meet the rigorous demands of power regulation applications. This device is tailored for efficient power management and is suitable for a wide range of electronic devices, including computing systems, automotive technology, and industrial equipment.

Key Features:

  • Low R<sub>DS(on): The NTD14N03R-1G boasts an impressively low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion.
  • High Current Capability: With the ability to handle a continuous drain current of up to 14A, this MOSFET can easily manage high current loads, making it ideal for robust applications.
  • High Voltage Tolerance: Rated for a maximum drain-source voltage of 30V, the device offers a comfortable margin for systems that experience voltage spikes, ensuring reliability and stability.
  • Logic Level Gate Drive: The device can be driven at logic level voltages, which simplifies the design of the drive circuitry and allows for direct interfacing with microcontrollers and other logic devices.

Energy-Efficient Performance:

The NTD14N03R-1G is engineered with energy efficiency in mind. Its low threshold voltage ensures that the device can switch on and off with minimal power loss, making it an environmentally friendly choice for energy-sensitive applications.

Robust and Reliable:

ON Semiconductor's commitment to quality is evident in the NTD14N03R-1G's robust construction. The device is encapsulated in a Pb-free, RoHS-compliant IPAK package, which provides excellent thermal performance and is designed to meet the highest standards of reliability and durability.

Applications:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Control Circuits
  • Automotive Applications
  • Switching Regulators

In summary, the NTD14N03R-1G from ON Semiconductor is a versatile and reliable Power MOSFET that offers a combination of low on-state resistance, high current handling, and energy-efficient operation, making it a top choice for designers looking to optimize power management in their electronic systems.

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