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MMDT3906TB6_R1_00001 Real Image1 MMDT3906TB6_R1_00001 Real Image2
Same model may have multiple batches, images only for reference.
MMDT3906TB6_R1_00001 Real Image1 MMDT3906TB6_R1_00001 Real Image2
MMDT3906TB6_R1_00001 Real Image1 MMDT3906TB6_R1_00001 Real Image2
Same model may have multiple batches, images only for reference.

MMDT3906TB6_R1_00001

Part No MMDT3906TB6_R1_00001
Manufacturer Panjit
Catalog Transistors (BJT) - Arrays
Description DUAL PNP GENERAL PURPOSE SWITCHI  /  Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 200mW Surface Mount SOT-563
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Panjit International Inc.
Package Tape & Reel
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 200mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names 3757-MMDT3906TB6_R1_00001CT,3757-MMDT3906TB6_R1_00001TR,3757-MMDT3906TB6_R1_00001DKR
Standard Package 4,000
Win Source Part Number 1201248-MMDT3906TB6_R1_00001
Ultra Librarian 3D Model Ultra Librarian MMDT3906TB6_R1_00001 CAD Model

Description

The Win Source part number 1201248-MMDT3906TB6_R1_00001 is a dual PNP bipolar transistor array.

  • Maximum Power: 200mW
  • Maximum Voltage (Collector Emitter Breakdown): 40V
  • Frequency Transition: 250MHz
  • Package/Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
  • Operating Temperature: -55°C to 150°C
  • DC Current Gain (hFE): 100 @ 10mA, 1V
  • Vce Saturation: 400mV @ 5mA, 50mA

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