The Panjit International Inc. MOSFET is a metal oxide semiconductor field-effect transistor designed for use in general-purpose applications.

• Channel Type: N-channel FET
• Mounting Style: SMD (SMT)
• Drain-to-Source Voltage: 50V
• Continuous Drain Current: 500mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 1V @ 250μA
• Power Dissipation (Max): 500mW (Ta)
• Package/Case: TO-236-3, SC-59, SOT-23-3
• Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
• Operating Temperature: -55°C to 150°C (TJ)
• HTSUS: 8541.21.0095